Abstract
This paper describes a semiempirical quantitative theory of the low‐lying electronic states of SiH, SiH2, and SiH3. The method used is that developed by Jordan to treat phosphorus hydrides. Best agreement with available experimental data is obtained when the valence state has a small percentage of d character and the d orbital is somewhat contracted by polarization. The ground state of SiH2 is predicted to be 1A1 with a bond angle of 95°. The three lowest‐lying excited states of SiH2, 3B1, 1B1, and 1A1 are also bent. SiH3 is predicted to be planar.